Simulation, design and fabrication of large area implanted silicon two-dimensional position sensitive radiation detectors

摘要

The fabrication process of a two-dimensional position sensitive radiation detector (2-D PSD) with a 4 cm2 active area is presented. Critical steps in the fabrication are emphasised. Edge effects represent critical problems in producing large area ion implanted silicon radiation detectors with low leakage currents and a high breakdown voltage (BV). Two methods have been used to increase the breakdown voltage of the junction: the use of i) floating field limiting rings (FFLR) and ii) field plates (FP). Several situations have been simulated analytically and numerically. A comparison of the theoretical results with the measurements realised using the detectors is presented. It is shown that a substantial improvement in the BV of the detector can be achieved by these methods.